Ambipolar Organic Field-Effect Transistors Based on Indigo Derivatives
Keywords:Organic transistor, ambipolar, organic semiconductor, natural material.
In order to improve the ambipolar performance of indigo-based semiconductors, we have investigated halogen-substituted (1 - 4) and phenyl-substituted (5) indigo derivatives at the 5-position. We show that introduction of iodine atoms, namely 5,5'-diiodoindigo (4), leads to the strong halogen-halogen interaction (iodine-iodine interaction) that gives a significant effect on the molecular packing. Thanks to the supramolecular network coming from the extra iodine-iodine interaction, the molecules are arranged approximately perpendicular to the substrate in the thin film. This results in remarkable transistor performance of the maximum hole and electron mobilities (µh/µe) = 0.42/0.85 cm2V–1s–1, which are one of the highest among small-molecule ambipolar organic transistors. Furthermore, introducing phenyl groups, 5 improves the transistor performances up to the maximum mobilities µh/µe = 0.56/0.95 cm2V–1s–1. We have found that the phenyl groups destroy the standard molecular packing of indigo to achieve a unique structure that is a hybrid of the herringbone and brickwork structures.
How to Cite
Authors who publish with Engineering Journal agree to transfer all copyright rights in and to the above work to the Engineering Journal (EJ)'s Editorial Board so that EJ's Editorial Board shall have the right to publish the work for nonprofit use in any media or form. In return, authors retain: (1) all proprietary rights other than copyright; (2) re-use of all or part of the above paper in their other work; (3) right to reproduce or authorize others to reproduce the above paper for authors' personal use or for company use if the source and EJ's copyright notice is indicated, and if the reproduction is not made for the purpose of sale.