Quantum Nanostructures by Droplet Epitaxy

Authors

  • Somsak Panyakeow Chulalongkorn University

DOI:

https://doi.org/10.4186/ej.2009.13.1.51

Abstract

Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120 - 350oC). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs) could be realized. Potential applications of these quantum nanostructures are also discussed.

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Author Biography

Somsak Panyakeow
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Semiconductor Device Research Laboratory (SDRL), CoE Nanotechnology Center of Thailand. Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Phyathai Road, Bangkok 10330, Thailand.

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Published In
Vol 13 No 1, Jan 1, 2009
How to Cite
[1]
S. Panyakeow, “Quantum Nanostructures by Droplet Epitaxy”, Eng. J., vol. 13, no. 1, pp. 51-56, Jan. 2009.
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